ASTM F76-2008 测量单晶半导体的电阻率、霍尔系数及霍尔迁移率的试验方法

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【英文标准名称】:StandardTestMethodsforMeasuringResistivityandHallCoefficientandDeterminingHallMobilityinSingle-CrystalSemiconductors
【原文标准名称】:测量单晶半导体的电阻率、霍尔系数及霍尔迁移率的试验方法
【标准号】:ASTMF76-2008
【标准状态】:现行
【国别】:美国
【发布日期】:2008
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.15
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:
【英文主题词】:galliumarsenide;Hallcoefficient;Halldata;Hallmobility;Hallresistivity;semiconductor;silicon;singlecrystal;vanderPauw;Bridge-typeelectrical/electronicmaterials;Crystallatticestructure;Eight-contactsemiconductorspecimens;Ele
【摘要】:Inordertochoosethepropermaterialforproducingsemiconductordevices,knowledgeofmaterialpropertiessuchasresistivity,Hallcoefficient,andHallmobilityisuseful.Undercertainconditions,asoutlinedintheAppendix,otherusefulquantitiesformaterialsspecification,includingthechargecarrierdensityandthedriftmobility,canbeinferred.1.1ThesetestmethodscovertwoproceduresformeasuringtheresistivityandHallcoefficientofsingle-crystalsemiconductorspecimens.Thesetestmethodsdiffermostsubstantiallyintheirtestspecimenrequirements.1.1.1TestMethodA,vanderPauw(1)x2014;Thistestmethodrequiresasinglyconnectedtestspecimen(withoutanyisolatedholes),homogeneousinthickness,butofarbitraryshape.Thecontactsmustbesufficientlysmallandlocatedattheperipheryofthespecimen.Themeasurementismosteasilyinterpretedforanisotropicsemiconductorwhoseconductionisdominatedbyasingletypeofcarrier.1.1.2TestMethodB,ParallelepipedorBridge-Type8212;Thistestmethodrequiresaspecimenhomogeneousinthicknessandofspecifiedshape.Contactrequirementsarespecifiedforboththeparallelepipedandbridgegeometries.Thesetestspecimengeometriesaredesirableforanisotropicsemiconductorsforwhichthemeasuredparametersdependonthedirectionofcurrentflow.Thetestmethodisalsomosteasilyinterpretedwhenconductionisdominatedbyasingletypeofcarrier.1.2Thesetestmethodsdonotprovideproceduresforshaping,cleaning,orcontactingspecimens;however,aprocedureforverifyingcontactqualityisgiven.Note18212;PracticeF418coversthepreparationofgalliumarsenidephosphidespecimens.1.3ThemethodinPracticeF418doesnotprovideaninterpretationoftheresultsintermsofbasicsemiconductorproperties(forexample,majorityandminoritycarriermobilitiesanddensities).Somegeneralguidance,applicabletocertainsemiconductorsandtemperatureranges,isprovidedintheAppendix.Forthemostpart,however,theinterpretationislefttotheuser.1.4Interlaboratorytestsofthesetestmethods(Section19)havebeenconductedonlyoveralimitedrangeofresistivitiesandforthesemiconductors,germanium,silicon,andgalliumarsenide.However,themethodisapplicabletoothersemiconductorsprovidedsuitablespecimenpreparationandcontactingproceduresareknown.Theresistivityrangeoverwhichthemethodisapplicableislimitedbythetestspecimengeometryandinstrumentationsensitivity.1.5Thevaluesstatedinacceptablemetricunitsaretoberegardedasthestandard.Thevaluesgiveninparenthesesareforinformationonly.(Seealso3.1.4.)1.6Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L41
【国际标准分类号】:29_045
【页数】:14P.;A4
【正文语种】:英语